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(Color online) (a) Schematic illustration of the n-ZnO/n-GaN isotype heterojunction LED device. (b) Cross-sectional TEM image of an area in the annealed ZnO/GaN heterojunction. (c) and (d) show the HR TEM image and the SAED pattern of the interface between ZnO and GaN of the sample, respectively.
(Color online) (a) and (b) Room temperature EL spectra of the n-ZnO/n-GaN isotype heterojunction LED under different injection currents at the UV-mode (a) and the orange-mode (b), respectively. The middle inset of Fig. 2(a) shows the zoom in on the room temperature EL spectra of the device under injection currents of 1 mA and 2 mA at the UV-mode. The top-right insets show the images of the LED device under injection current of 6 mA at the UV-mode and the orange-mode, respectively.
(Color online) (a) Room temperature PL spectra of the GaN/Al2O3 substrate and the annealed ZnO/GaN/Al2O3 heterostructure. (b) Current and output light power as a function of the applied voltage of the bicolor LED. The inset of Fig. 3(b) shows the emission intensities versus V−1/2 characteristics of the bicolor LED.
Time dependences of the EL intensities at the fixed wavelengths ((a): 367 nm and (b): 640 nm) of the LED device under the injection current of 6 mA at the UV-mode and the orange-mode, respectively. The insets show the responses of the EL intensities for 4 switch-on/switch-off pulses, respectively.
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