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Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography
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10.1063/1.3672194
/content/aip/journal/apl/99/26/10.1063/1.3672194
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/26/10.1063/1.3672194
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Figures

Image of FIG. 1.
FIG. 1.

(a) Low magnification dark field HAADF STEM image of the InAs QDs in the InP lattice. (b) Low magnification dark field HAADF STEM image with specimen tilted showing that the quantum dot examined is perfectly encapsulated in the InP. The arrow shows the individual QD that was selected for analysis. (c) A probe corrected HAADF STEM image of the quantum dot examined in these experiments.

Image of FIG. 2.
FIG. 2.

(Color online) (a) A dark field electron hologram of a single InAs quantum dot encapsulated in InP. The (004) diffraction spot has been selected. (b) Strain map for the (004) growth direction. (c) Experimental strain profile extracted from the region indicated by the dashed line in the strain map (solid line) compared to simulations (dashed line). (d) Strain map for the (220) in plane direction acquired using dark field electron holography. (e) A strain map for the (004) growth direction calculated from the HAADF STEM image. (f) Experimental strain profile extracted from the region indicated by the dashed line in the strain map (solid line) compared to simulations (dashed line).

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/content/aip/journal/apl/99/26/10.1063/1.3672194
2011-12-30
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/26/10.1063/1.3672194
10.1063/1.3672194
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