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Non-volatile high-speed resistance switching nanogap junction memory
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10.1063/1.3672195
/content/aip/journal/apl/99/26/10.1063/1.3672195
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/26/10.1063/1.3672195
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Pictorial representation of nanogap junction and resistance switching test circuit. When unselected, the switch port is set to ground. (b) Nanogap junction resistance distribution after applying voltage pulses of varying levels and widths to a low resistive ON state. The data points represent the average of logarithm of resistance over 20 cycles and the error bar is the standard deviation.

Image of FIG. 2.
FIG. 2.

(Color) (a) The high to low resistance switching (ON state) at a pulse level of 10 V with varying widths for Rs = 100, 200, 500, and 1000 kΩ. Note the switching occurs only above certain threshold widths for each Rs. (b) The threshold pulse width for switching (filled square) as a linear function of Rs. The redcircles are the switching time delay derived from the oscilloscope pattern. The blue lines are the estimated time delay for two capacitance values (0.6 and 60 pF) in the 100 kΩ-2.2 MΩ range. The empty square is the threshold pulse width of the nanogap junction on quartz substrate.

Image of FIG. 3.
FIG. 3.

(Color online) The resistance distribution in ON and OFF state switching in a nanogap junction. The OFF state operation was performed with 10 V and 20 ns pulse while the ON state with a pulse of 100 μs width, 8-10 V level and Rs = 1 MΩ.

Image of FIG. 4.
FIG. 4.

(Color) The pattern captured at the oscilloscope after applying a reference pulse (100 μs-10 V) to nanogap junction with Rs = 100, 200, 500, and 1000 kΩ. Note the switching occurs around 5 V level with a proportional delay for increasing resistances.

Image of FIG. 5.
FIG. 5.

(Color online) 200 cycles of repeated OFF-ON switching of nanogap structure on quartz. The OFF state was accomplished using 11 V and 20 ns pulse while the ON state by 8 V and 200 ns pulse and Rs = 100 kΩ.

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/content/aip/journal/apl/99/26/10.1063/1.3672195
2011-12-28
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Non-volatile high-speed resistance switching nanogap junction memory
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/26/10.1063/1.3672195
10.1063/1.3672195
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