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(Color online) (a) Pictorial representation of nanogap junction and resistance switching test circuit. When unselected, the switch port is set to ground. (b) Nanogap junction resistance distribution after applying voltage pulses of varying levels and widths to a low resistive ON state. The data points represent the average of logarithm of resistance over 20 cycles and the error bar is the standard deviation.
(Color) (a) The high to low resistance switching (ON state) at a pulse level of 10 V with varying widths for Rs = 100, 200, 500, and 1000 kΩ. Note the switching occurs only above certain threshold widths for each Rs. (b) The threshold pulse width for switching (filled square) as a linear function of Rs. The redcircles are the switching time delay derived from the oscilloscope pattern. The blue lines are the estimated time delay for two capacitance values (0.6 and 60 pF) in the 100 kΩ-2.2 MΩ range. The empty square is the threshold pulse width of the nanogap junction on quartz substrate.
(Color online) The resistance distribution in ON and OFF state switching in a nanogap junction. The OFF state operation was performed with 10 V and 20 ns pulse while the ON state with a pulse of 100 μs width, 8-10 V level and Rs = 1 MΩ.
(Color) The pattern captured at the oscilloscope after applying a reference pulse (100 μs-10 V) to nanogap junction with Rs = 100, 200, 500, and 1000 kΩ. Note the switching occurs around 5 V level with a proportional delay for increasing resistances.
(Color online) 200 cycles of repeated OFF-ON switching of nanogap structure on quartz. The OFF state was accomplished using 11 V and 20 ns pulse while the ON state by 8 V and 200 ns pulse and Rs = 100 kΩ.
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