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(Color online) (a) Schematic diagram for the device based on SiO2/ZnO-CdO/SiO2 double-barrier structure. (b) I-V characteristics of the device as shown in (a). (c) The elemental depth profiles of Zn, Cd, and O in the ZnO-CdO interdiffused film measured by SIMS. (d) RT PL spectra for the ZnO, CdO, and CdO-ZnO interdiffused films annealed at 700 °C for 1 h under O2 ambient, respectively.
(Color online) (a) Cross-sectional TEM image of ZnO-CdO interdiffused film grown on silicon substrate with a SiO2 barrier layer. (b), (c) HRTEM images taken from the areas 1 and 2 as marked in (a), respectively. The insets in either (b) or (c) show the corresponding FFT pattern of the whole HRTEM image and the enlarged HRTEM image for certain region. (d) XRD pattern for the ZnO-CdO interdiffused film.
(Color online) (a) RT EL spectra for the device based on SiO2/ZnO-CdO/SiO2 double-barrier structure under different forward bias voltages/currents. The inset in the upper panel shows the detected output power as a function of injection current for the device. (b) The EL spectra in the visible region of 630-690 nm, extracted from (a), for the device under different forward bias voltages/currents. The inset in the upper panel shows a digital camera picture of the visible emissions emanating from the device.
(Color online) Schematic diagrams of the energy band structures for the device based on SiO2/ZnO-CdO/SiO2 double-barrier structure under a given (a) low and (b) high forward bias voltages, respectively.
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