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(a) SEM image of GaAs/GaSb heterostructure nanowires grown on a GaAs (111)B substrate using aerosol gold particles with diameter of 40 nm as initial seeds. In the heterostructure nanowires, the base segments with a small diameter are GaAs. Both segments have zinc-blende crystal structure. (b) SEM image of a GaSb single-hole transistor. The device is fabricated by electrically contacting the GaSb segments of a GaAs/GaSb heterostructure nanowire on degenerately doped Si substrate capped with a 100 nm thick SiO2.
(Color online) (a) I-Vsd characteristic of a fabricated device at room temperature, as-deposited contacts show resistance around 100 kΩ. (b) Source-drain current versus back-gate voltage for Vsd = 20 mV at room temperature, showing typical hole transport gate-dependence.
(Color online) (a) I-V characteristics of the device at 1.5 K recorded in the blockade regime. (b) Coulomb blockade oscillations at 1.5 K and Vsd = 100 μV measured for 60 nm diameter device with contact spacing of 150 nm. (c) Gray scale plot of differential conductance of the device as a function of the source-drain voltage, Vsd, and the back-gate voltage, Vbg, recorded at 1.5 K The diamond-shaped regions with bright color indicate a lower value of conductance.
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