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Electrically tunable hole tunnelling from a single self-assembled quantum dot embedded in an n-i-Schottky photovoltaic cell
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10.1063/1.3614418
/content/aip/journal/apl/99/3/10.1063/1.3614418
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/3/10.1063/1.3614418
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic diagram of the n-i-Schottky photodiode used for single-QD PC measurements. (b) Energy-level diagram using resonant laser-excitation. (c) Single-QD X0 PC peak obtained by sweeping the X0 transition energy through a fixed Elaser via the QCSE. For this PC peak, Elaser  = 1364.23 meV and the laser excitation-intensity is 400 nW. The solid line is a Lorentzian fit.

Image of FIG. 2.
FIG. 2.

(Color online) Plot of the PC peak amplitude Ipeak as a function of normalized laser excitation-intensity for X0 resonance peaks centered at several values of F. The solid lines are fits using the theoretical model of Eq. (1).

Image of FIG. 3.
FIG. 3.

(Color online) Plot of Isat (squares) and hole tunnelling time (circles) as a function of F. The solid lines are fits using the theoretical model based on a 1D WKB approximation in Eq. (2), yielding H = 4.5 0.3 nm and Eb  = 40.5 0.3 meV. Inset: Theoretical calculation of the valence band and QD s-shell hole eigenvalue using a 1D self-consistent Poisson-Schrödinger solver.

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/content/aip/journal/apl/99/3/10.1063/1.3614418
2011-07-18
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrically tunable hole tunnelling from a single self-assembled quantum dot embedded in an n-i-Schottky photovoltaic cell
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/3/10.1063/1.3614418
10.1063/1.3614418
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