Full text loading...
(Color online) Optical gain spectra of a GaInN/GaN/AlGaN double quantum well laser structure. The full lines are fits using a self-consistent optical gain model. The model gain spectra are also used to obtain the modal absorption at the excitation laser wavelength. The inset gives the carrier densities and the incident and absorbed power densities.
(Color online) Inverse effective recombination lifetime versus carrier density obtained from the gain measurements. The dashed line is the inverse radiative lifetime obtained from the gain model. The full line represents a fit assuming nonradiative defect and Auger recombination.
(Color online) Auger coefficients for various GaInN/GaN/AlGaN laser structures compared to Auger coefficients for other semiconductors. Full triangles are for GaInN single QWs, open triangles are for GaInN multiple QWs. Data points: InSb (Ref. 21), InAs (Ref. 22), GaSb (Ref. 22), GaInAs (Ref. 8), GaAs (Ref. 23), GaInAsP (Ref. 24), GaInP (Ref. 25), p-Ge (Ref. 11), Si (Ref. 12), Shen et al. (Ref. 4).
Article metrics loading...