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(Color online) (a) Magnetoresistance of the sample at different gate voltages. Inset: Fourier transform of the low-field SdH oscillations at zero gate voltage revealing a single peak so demonstrating single subband occupation. (b) Hall resistance at corresponding gate voltages. Inset shows schematic section of the sample, A (white) is the p-type MCT film, B (light blue) is the inversion layer, C (black) is one of the Ohmic contacts, D (yellow) is the insulation layer for the gate, and E (brown) is the gate.
(Color online) (a) WAL effect at different temperatures with 0 V applied to the gate. Blue circles are the experimental data points and red curves are fits following Golub’s model. Data points and fits have been shifted vertically for clarity. (b) Zero gate voltage value of plotted as a function of temperature (blue circles). Red curve is a fit according to .
(Color online) (a) WAL effect at different gate voltages at 1.4 K. Blue circles are the experimental data points and the red curves are fits following Golub’s model. Data points and fits have been shifted vertically for clarity. (b) Zero-field spin-splitting energy Δ0 as a function of carrier density n. Blue triangles are experimental data points. Red curve is a fit to . (c) Rashba parameter α as a function of n. Blue circles are experimental data points. Red horizontal line corresponds to α determined from the fit to the data in (b).
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