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Low temperature solution-processed graphene oxide/Pr0.7Ca0.3MnO3 based resistive-memory device
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10.1063/1.3617426
/content/aip/journal/apl/99/4/10.1063/1.3617426
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/4/10.1063/1.3617426
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic structure and (b) SEM cross sectional image of the GO/PCMO device. (c) Raman spectra of GO/PCMO film, and (d) XPS analysis of GO layer.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Typical I-V hysteresis curves of the GO/PCMO and PCMO device. The inset shows I-V hysteresis curve of the Pt/GO/Pt device. (b) Log I–log V plot of HRS and LRS of the GO/PCMO device.

Image of FIG. 3.
FIG. 3.

(Color online) Proposed switching mechanism of GO/PCMO device (a) LRS and (b) HRS state of the sample.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Retention characteristics at 85 °C for 104 s and (b) pulse switching characteristic of GO/PCMO device.

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/content/aip/journal/apl/99/4/10.1063/1.3617426
2011-07-26
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low temperature solution-processed graphene oxide/Pr0.7Ca0.3MnO3 based resistive-memory device
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/4/10.1063/1.3617426
10.1063/1.3617426
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