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(Color online) Schematic of GO sheet coupled with PAA. Inset is the pristine GO sheets (right) and GO/PAA (left) dispersed in DMF.
(Color online) (a) FE-SEM image of the cross sectional view for the GO-PI film. (b) Schematic of Ag/PI/GO:PI/PI/ITO memory device.
(Color online) (a) I-V characteristics for Ag/PI/GO:PI/PI/ITO and Ag/PI/ITO device. (b) Write–read–erase–read sequence test for Ag/PI/GO:PI/PI/ITO memory device. (c) Resistance of LRS and HRS at 1 V for 130 cycles. (d) Cumulative probability data of LRS and HRS resistance. (e) Threshold voltage distributions for “write” and “erase” process. (f) C-V curves for Ag/PI/GO:PI/PI/p-Si device measured at a maximum voltage of 4, 3, 2.5, and 2 V.
(Color online) (a) I-V curves for Ag/PI/GO:PI/PI/ITO device under different reset voltages from −3 to −7 V. (b) Retention characteristics for Ag/PI/GO:PI/PI/ITO device at different conduction states.
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