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Highly reproducible memory effect of organic multilevel resistive-switch device utilizing graphene oxide sheets/polyimide hybrid nanocomposite
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10.1063/1.3619815
/content/aip/journal/apl/99/4/10.1063/1.3619815
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/4/10.1063/1.3619815
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic of GO sheet coupled with PAA. Inset is the pristine GO sheets (right) and GO/PAA (left) dispersed in DMF.

Image of FIG. 2.
FIG. 2.

(Color online) (a) FE-SEM image of the cross sectional view for the GO-PI film. (b) Schematic of Ag/PI/GO:PI/PI/ITO memory device.

Image of FIG. 3.
FIG. 3.

(Color online) (a) I-V characteristics for Ag/PI/GO:PI/PI/ITO and Ag/PI/ITO device. (b) Write–read–erase–read sequence test for Ag/PI/GO:PI/PI/ITO memory device. (c) Resistance of LRS and HRS at 1 V for 130 cycles. (d) Cumulative probability data of LRS and HRS resistance. (e) Threshold voltage distributions for “write” and “erase” process. (f) C-V curves for Ag/PI/GO:PI/PI/p-Si device measured at a maximum voltage of 4, 3, 2.5, and 2 V.

Image of FIG. 4.
FIG. 4.

(Color online) (a) I-V curves for Ag/PI/GO:PI/PI/ITO device under different reset voltages from −3 to −7 V. (b) Retention characteristics for Ag/PI/GO:PI/PI/ITO device at different conduction states.

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/content/aip/journal/apl/99/4/10.1063/1.3619815
2011-07-29
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Highly reproducible memory effect of organic multilevel resistive-switch device utilizing graphene oxide sheets/polyimide hybrid nanocomposite
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/4/10.1063/1.3619815
10.1063/1.3619815
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