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Robust bi-stable memory operation in single-layer graphene ferroelectric memory
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) (a) 3D color plot of the contrast as a function of wavelength and tPZT. (b) Contrast as a function of the wavelength at tPZT = 180 nm. The red circles indicate equivalent points in top row. (c) Raman spectrum of exfoliated- and CVD-SLG on PZT. (Inset shows an optical image of a large exfoliated-SLG on 180 nm-thick PZT at 600 nm visible wavelength. (d) Schematic device structure of SLG FFET.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Hysteresis characteristics of the exfoliated-SLG FFET with varied Vg(sweep) at Vds = 0.5 mV. (b) Hysteresis characteristics of CVD-SLG FFET with varied Vg(sweep) at Vds = 5 mV. (c) ΔVM as a function of Vg(sweep). The blue and red circles correspond to the ΔVM extracted from transfer characteristics of exfoliated- and CVD-SLG FFETs, respectively. The black circles correspond to the ΔVM extracted from the P-Vg of the PZT capacitor. (Inset shows the P-Vg of a 180 nm-thick PZT capacitor.) The colors indicate sweeping voltages (1, 3, 5, and 7 V) in each figure. (d) Retention time characteristics of CVD-SLG FFET after applying writing voltages of ±6 V. Readout was performed at Vg = −1 V and Vds = 5 mV.

Image of FIG. 3.
FIG. 3.

(Color online) C-V characteristics of Pt/PZT/Pt and Pt/PZT/SLG/Pt capacitors.

Image of FIG. 4.
FIG. 4.

(Color online) Band diagram of SLG-FFET at various bias conditions depending on sweep direction: (a) Vg = VG1↑, (b) Vg = VG2↑, (c) Vg =VG2↓, and (d) Vg = VG1↓.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Robust bi-stable memory operation in single-layer graphene ferroelectric memory