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High frequency capacitance-voltage technique for the extraction of interface trap density of the heterojunction capacitor: Terman’s method revised
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10.1063/1.3615279
/content/aip/journal/apl/99/5/10.1063/1.3615279
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/5/10.1063/1.3615279
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Conduction band diagram, (b) charge profile, and (c) capacitive network for the oxide/heterojunction MLC.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Capacitance-voltage characteristics and (b) the corresponding extracted Dit profile from the imposed trap distributions at room temperature. The intermediate parameter, ΔVGS versus the energy spectrum is plotted (open triangles).

Image of FIG. 3.
FIG. 3.

(Color online) Example of Dit profiles extracted at 300 K (open circles) and 77 K (closed circles) illustrating the effect of thermal smearing for a (a) distributed trap density and (b) discrete trap state.

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/content/aip/journal/apl/99/5/10.1063/1.3615279
2011-08-01
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High frequency capacitance-voltage technique for the extraction of interface trap density of the heterojunction capacitor: Terman’s method revised
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/5/10.1063/1.3615279
10.1063/1.3615279
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