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17.See supplementary material at http://dx.doi.org/10.1063/1.3616147 for Raman spectra and dielectric relaxation data. [Supplementary Material]
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/content/aip/journal/apl/99/5/10.1063/1.3616147
2011-08-04
2015-05-07

Abstract

We report on the deposition of thin films of the [Fe(HB(pz)3)2] (pz = pyrazolyl) molecular spin crossover complex by thermal evaporation. By means of impedance measurements and Raman microspectroscopy, we show that the films maintain the structure and properties of the bulk material. The conductivity of the films decreases by ca. 2 orders of magnitude when the freshly deposited compound goes through a first (irreversible) thermal phase change above ca. 380 K. This property can be exploited as a non-volatile (read-only) memory effect.

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Scitation: Electrical properties and non-volatile memory effect of the [Fe(HB(pz)3)2] spin crossover complex integrated in a microelectrode device
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/5/10.1063/1.3616147
10.1063/1.3616147
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