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Electrical properties and non-volatile memory effect of the [Fe(HB(pz)3)2] spin crossover complex integrated in a microelectrode device
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FIG. 1.

(Color online) Bright field optical microscopy images of the microelectrodes before (a) and after (b) the deposition of a [Fe(HB(pz)3)2] thin film. AFM (c) and SEM (d) images showing the film morphology.

Image of FIG. 2.

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FIG. 2.

(Color online) Temperature dependence of the ac conductivity of [Fe(HB(pz)3)2] for microcrystalline powder (a) and (c) and thin film samples (b) and (d). (a) and (b) The frequency dependence of the conductivity at selected temperatures (first heating sequence); (c) and (d) the temperature dependence of σ′ recorded at 10 mHz over two successive thermal cycles. At this frequency, σ′ can be assimilated with σdc.

Image of FIG. 3.

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FIG. 3.

(Color online) (a) I-V characteristics of the [Fe(HB(pz)3)2] thin film based device recorded at 295 K before and after the write process. (b) Step-wise increase of the applied bias at 370 K revealing the switching (write) process for 2 V applied bias. (Data points are connected to guide the eye.)

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/content/aip/journal/apl/99/5/10.1063/1.3616147
2011-08-04
2014-04-18

Abstract

We report on the deposition of thin films of the [Fe(HB(pz)3)2] (pz = pyrazolyl) molecular spin crossover complex by thermal evaporation. By means of impedance measurements and Raman microspectroscopy, we show that the films maintain the structure and properties of the bulk material. The conductivity of the films decreases by ca. 2 orders of magnitude when the freshly deposited compound goes through a first (irreversible) thermal phase change above ca. 380 K. This property can be exploited as a non-volatile (read-only) memory effect.

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Scitation: Electrical properties and non-volatile memory effect of the [Fe(HB(pz)3)2] spin crossover complex integrated in a microelectrode device
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/5/10.1063/1.3616147
10.1063/1.3616147
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