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Identification of embedded charge defects in suspended silicon nanowires using a carbon-nanotube cantilever gate
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10.1063/1.3619177
/content/aip/journal/apl/99/5/10.1063/1.3619177
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/5/10.1063/1.3619177
/content/aip/journal/apl/99/5/10.1063/1.3619177
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/content/aip/journal/apl/99/5/10.1063/1.3619177
2011-08-01
2014-11-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Identification of embedded charge defects in suspended silicon nanowires using a carbon-nanotube cantilever gate
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/5/10.1063/1.3619177
10.1063/1.3619177
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