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Identification of embedded charge defects in suspended silicon nanowires using a carbon-nanotube cantilever gate
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Fabrication of a movable CNT gate. (a) CNT strands attached to a blade (not shown). One of the CNT strands is attracted to a Au-probe by van der Waals force and is glued to the probe by carbonaceous deposits (see enlarged image). (b)–(d) The CNT cutting process using electron beam scanning with short exposure windows of 3, 6, and 9 min. (e) Cutting of a thin CNT-strand. The strand is attached to a thick CNT-strand, which is welded to the Au-probe. The red arrows indicate the cutting point.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Schematic presentation of experimental setup for a movable CNT gate along silicon nanowires (SiNWs). (b) SEM image of a suspended SOI-based SiNW. (c) SEM images of a CNT gate with the thin CNT strand placed at several equally spaced locations on the SiNW surface. The locations at the source and drain borders are defined as L = −1.5 and + 1.5 μm, respectively.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Resistance difference ΔR 0 for the CNT gate at various positions. Here, ΔR 0 is the difference between the resistances measured in the absence and in the presence of trapped electrons for the CNT gate at various positions. The trapped electrons are located at L = +0.5 micron. The blue dashed-line indicates increased SiNW resistance due to the trapped electrons. The inset shows the resistance of the SiNW before e-beam bombardment as a function of CNT gate voltage. (b) IVb curves measured before (green-dotted curve) and after (blue-cross curve) the e-beam bombardment. Red-square curve is the IVb characteristics after thermal detrapping at 180 °C for 10 min.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Identification of embedded charge defects in suspended silicon nanowires using a carbon-nanotube cantilever gate