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Highest transmittance and high-mobility amorphous indium gallium zinc oxide films on flexible substrate by room-temperature deposition and post-deposition anneals
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10.1063/1.3619196
/content/aip/journal/apl/99/5/10.1063/1.3619196
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/5/10.1063/1.3619196
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Variation in the resistivity of a-IGZO films annealed at 150 °C in different environments.

Image of FIG. 2.
FIG. 2.

(Color online) Variation in carrier concentration and carrier mobility with increasing anneal time for a-IGZO films annealed at 150 °C in different environments.

Image of FIG. 3.
FIG. 3.

(Color online) UV-vis transmittance spectra of un-annealed and annealed a-IGZO films on PEN substrates.

Image of FIG. 4.
FIG. 4.

(Color online) Carrier mobility as a function of carrier concentration in a-IGZO films on PEN: a comparison between the calculated and measured mobility values.

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/content/aip/journal/apl/99/5/10.1063/1.3619196
2011-08-01
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Highest transmittance and high-mobility amorphous indium gallium zinc oxide films on flexible substrate by room-temperature deposition and post-deposition anneals
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/5/10.1063/1.3619196
10.1063/1.3619196
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