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High optical polarization ratio from semipolar () blue-green InGaN/GaN light-emitting diodes
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10.1063/1.3619826
/content/aip/journal/apl/99/5/10.1063/1.3619826
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/5/10.1063/1.3619826
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) The schematic views for different crystal planes of , and -plane in wurtzite crystal structure.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Polarization ratio of the LEDs on plane GaN substrates as a function of the peak wavelength of the dominant emission component. (b) Polarization ratio of the LEDs on plane GaN substrates as a function of different current densities.

Image of FIG. 3.
FIG. 3.

(Color online) EL spectra of LEDs at a wavelength of (a) 418 nm, (b) 519 nm, and (c) energy separation with increasing wavelength on plane devices.

Image of FIG. 4.
FIG. 4.

(Color online) The energy separation between the top two valence bands at the Γ point for 3 nm semipolar InGaN QW strained on GaN with different In compositions obtained by the k·p method using 3 software. The experimental data on and are also plotted for comparison, where the In composition is determined by assuming Vegard’s law.

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/content/aip/journal/apl/99/5/10.1063/1.3619826
2011-08-03
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High optical polarization ratio from semipolar (202¯1¯) blue-green InGaN/GaN light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/5/10.1063/1.3619826
10.1063/1.3619826
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