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Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells
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10.1063/1.3621835
/content/aip/journal/apl/99/5/10.1063/1.3621835
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/5/10.1063/1.3621835
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) CuxTe1−x dot pattern on the wafer, the inset showing a schematic cross-section of the cell stack; (b) and (c) relations between the y-coordinate of the cell and the composition and sheet resistance Rs h , respectively, of the CuxTe1−x layer.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Forming voltage VF and resistance RINIT of as-prepared cells (measured at +0.2V) as a function of x in CuxTe1−x; the inset shows the forming I-V traces; (b) XRD diagrams of the CuxTe1−x layers, revealing different phases depending on the x range; (c) Scanning Electron Microscopy (SEM) images showing the surface morphologies of the CuxTe1−x layer for different x values.

Image of FIG. 3.
FIG. 3.

(Color online) LRS resistance RLRS (a) and reset current IRESET (b) as a function of x in CuxTe1−x, both extracted after set switching using ICOMP  = 100 μA (full circles) or ICOMP  = 5 μA (empty squares); (c) Typical I-V set and reset traces observed for the three composition regions (1) x < 0.5, (2) 0.5 < x < 0.7, and (3) x > 0.7; (d) Schematics of the phenomenology of Cu-filament formation in each region.

Image of FIG. 4.
FIG. 4.

(Color online) (a) HRS and LRS resistance control observed over 103 I-V cycles using ICOMP  = 5 μA (inset shows 30 consecutive I-V cycles); (b) HRS and LRS resistance monitoring at 85 °C using constant bias voltage of 20 mV.

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/content/aip/journal/apl/99/5/10.1063/1.3621835
2011-08-01
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/5/10.1063/1.3621835
10.1063/1.3621835
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