Full text loading...
(Color online) (a) CuxTe1−x dot pattern on the wafer, the inset showing a schematic cross-section of the cell stack; (b) and (c) relations between the y-coordinate of the cell and the composition and sheet resistance Rs h , respectively, of the CuxTe1−x layer.
(Color online) (a) Forming voltage VF and resistance RINIT of as-prepared cells (measured at +0.2V) as a function of x in CuxTe1−x; the inset shows the forming I-V traces; (b) XRD diagrams of the CuxTe1−x layers, revealing different phases depending on the x range; (c) Scanning Electron Microscopy (SEM) images showing the surface morphologies of the CuxTe1−x layer for different x values.
(Color online) LRS resistance RLRS (a) and reset current IRESET (b) as a function of x in CuxTe1−x, both extracted after set switching using ICOMP = 100 μA (full circles) or ICOMP = 5 μA (empty squares); (c) Typical I-V set and reset traces observed for the three composition regions (1) x < 0.5, (2) 0.5 < x < 0.7, and (3) x > 0.7; (d) Schematics of the phenomenology of Cu-filament formation in each region.
(Color online) (a) HRS and LRS resistance control observed over 103 I-V cycles using ICOMP = 5 μA (inset shows 30 consecutive I-V cycles); (b) HRS and LRS resistance monitoring at 85 °C using constant bias voltage of 20 mV.
Article metrics loading...