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Conductance switching in organic ferroelectric field-effect transistors
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FIG. 1.

(Color online) Transfer characteristics and gate leakage currents of organic FeFETs under different drain bias conditions while source electrode is grounded. The film thicknesses were 30 nm and 1300-1400 nm for the semiconductor PTAA and the ferroelectric P(VDF-TrFE). Channel length and width are 5 and 10 000 μm. The dotted lines show polarization reversal at the source (Vgs ).

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FIG. 2.

(Color online) Transfer characteristics and gate leakage currents of organic FeFETs under different source bias conditions while the drain electrode is grounded. The film thicknesses were 30 nm and 1300-1400 nm for the semiconductor PTAA and the ferroelectric P(VDF-TrFE). Channel length and width are 5 and 10 000 μm. The dotted lines show polarization reversal at the drain electrode (Vgd ).

Image of FIG. 3.

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FIG. 3.

(Color online) Retention time measurements of a fully polarized and a partially polarized ferroelectric field-effect transistor. The squares show the on-state and off-state current as a function of time for a fully polarized FeFET. The circles represent retention time of a FeFET where the source is polarized and the drain is depolarized. The inset is a schematic presentation of the expected potential profiles inside the channel. The black arrows show partial polarization of P(VDF-TrFE) and the red triangle shows the potential profile. The channel is pinched-off by the ferroelectric polarization.

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/content/aip/journal/apl/99/5/10.1063/1.3621857
2011-08-04
2014-04-17

Abstract

Staggered bottom-contact top-gate organic ferroelectricfield-effect transistors are fabricated with poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) as ferroelectric gate and poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] as semiconductor.Polarization reversal of the ferroelectric gate is monitored by displacement transients in the gate current. By varying both the source and drain biases and by using fully and partially polarized transistors, we show that conductance switching only requires polarization of P(VDF-TrFE) at the source electrode.Polarization at the drain is irrelevant and does not impede charge extraction.

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Scitation: Conductance switching in organic ferroelectric field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/5/10.1063/1.3621857
10.1063/1.3621857
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