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Conductance switching in organic ferroelectric field-effect transistors
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/content/aip/journal/apl/99/5/10.1063/1.3621857
2011-08-04
2014-10-26

Abstract

Staggered bottom-contact top-gate organic ferroelectricfield-effect transistors are fabricated with poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) as ferroelectric gate and poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] as semiconductor.Polarization reversal of the ferroelectric gate is monitored by displacement transients in the gate current. By varying both the source and drain biases and by using fully and partially polarized transistors, we show that conductance switching only requires polarization of P(VDF-TrFE) at the source electrode.Polarization at the drain is irrelevant and does not impede charge extraction.

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Scitation: Conductance switching in organic ferroelectric field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/5/10.1063/1.3621857
10.1063/1.3621857
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