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On inhibiting Auger intraband relaxation in InAs/GaAs quantum dot intermediate band solar cells
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10.1063/1.3621876
/content/aip/journal/apl/99/5/10.1063/1.3621876
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/5/10.1063/1.3621876
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) General structure of an intermediate band solar cell showing the simplified bandgap diagram and the generation recombination processes involved.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Intraband Auger electron cooling recombination mechanisms in InAs/GaAs QDs and (b) intraband Auger electron cooling recombination mechanisms in virtual InAs/GaAs QDs with zero valence band offset.

Image of FIG. 3.
FIG. 3.

(Color online) Auger electron cooling times as a function of the QD base length in InAs/GaAs QDs (open symbols) and in virtual InAs/GaAs QDs with zero valence band offset (solid symbols).

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/content/aip/journal/apl/99/5/10.1063/1.3621876
2011-08-05
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: On inhibiting Auger intraband relaxation in InAs/GaAs quantum dot intermediate band solar cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/5/10.1063/1.3621876
10.1063/1.3621876
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