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Highly conductive and transparent alumina-doped ZnO films processed by direct pulsed laser recrystallization at room temperature
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10.1063/1.3622645
/content/aip/journal/apl/99/5/10.1063/1.3622645
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/5/10.1063/1.3622645

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic of DPLR technique. (b) A typical AZO film processed by DPLR. (c) Temperature evolution of AZO film and SLG carried out by multiphysics EM-HT simulation. (see Ref. 15).

Image of FIG. 2.
FIG. 2.

(Color online) Morphology of AZO films obtained from (a) PLD, (b) DPLR; (c) Histogram of AZO size distribution.

Image of FIG. 3.
FIG. 3.

(Color online) Transmittance and absorptance spectra of AZO films processed by R.T. PLD (dashed-dot) and DPLR under three different conditions.

Tables

Generic image for table
Table I.

Electrical properties of AZO films deposited in this study vs. at prior literatures at RT or elevated temperatures.

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/content/aip/journal/apl/99/5/10.1063/1.3622645
2011-08-02
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Highly conductive and transparent alumina-doped ZnO films processed by direct pulsed laser recrystallization at room temperature
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/5/10.1063/1.3622645
10.1063/1.3622645
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