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Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices
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10.1063/1.3622649
/content/aip/journal/apl/99/5/10.1063/1.3622649
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/5/10.1063/1.3622649

Figures

Image of FIG. 1.
FIG. 1.

(Color online) XPS Ge 3d spectra for the Al2O3/HfO2/GeO2/Ge sample.

Image of FIG. 2.
FIG. 2.

(Color online) The C-V characterization of MOS capacitors with Pt/HfO2/GeO2/Ge after (a) 350 °C FGA and (b) 350 °C oxygen ambient annealing.

Image of FIG. 3.
FIG. 3.

(Color online) Flatband voltages vs EOT after 350 °C FGA and oxygenic ambient annealing.

Tables

Generic image for table
Table I.

Variety of VFB and Dit after FGA or O2 annealing at 300 and 350 °C.

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/content/aip/journal/apl/99/5/10.1063/1.3622649
2011-08-03
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/5/10.1063/1.3622649
10.1063/1.3622649
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