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Room temperature spin relaxation length in spin light-emitting diodes
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10.1063/1.3622662
/content/aip/journal/apl/99/5/10.1063/1.3622662
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/5/10.1063/1.3622662

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Layer structure (not to scale) of the 50 nm injection path sample (sample a). The thickness of the upper i-GaAs layer between the QDs and the n-GaAs layer was varied between 30 nm for this sample and 150 nm for the longest injection path sample (sample e).

Image of FIG. 2.
FIG. 2.

(Color online) Calculated circular polarization for fully perpendicular magnetization in remanence over injection path length. The solid red (dashed blue) line shows an exponential (Gaussian) decay fit to the data.

Tables

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Table I.

Measured circular polarization, the quantity [〈cos2(θ)〉]1/2 and average Fe-spin canting angle 〈θ〉 from CEMS and calculated circular polarization for fully perpendicular magnetization for all samples.

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/content/aip/journal/apl/99/5/10.1063/1.3622662
2011-08-02
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room temperature spin relaxation length in spin light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/5/10.1063/1.3622662
10.1063/1.3622662
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