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Erratum: “Indium migration paths in V-defects of InAlN grown by metal-organic vapor phase epitaxy” [Appl. Phys. Lett. 95, 071905 (2009)]
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/content/aip/journal/apl/99/5/10.1063/1.3623430
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1. L. Zhou, M. R. McCartney, D. J. Smith, A. Mouti, E. Feltin, J. F. Carlin, and N. Grandjean, Appl. Phys. Lett. 97, 161902 (2010).
http://dx.doi.org/10.1063/1.3502483
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FIG. 1.

Plan-view HRTEM image of the In0.24Al0.76N film, depicting a V-defect in the form of an inverted pyramid with six { 2l} sidewall facets. Their edges are along directions, whereas their traces with the (0001) surface are the prismatic directions as illustrated by the corresponding FFT diffractogram comprising 100 spatial frequencies.

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2011-08-01
2014-04-19

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Scitation: Erratum: “Indium migration paths in V-defects of InAlN grown by metal-organic vapor phase epitaxy” [Appl. Phys. Lett. 95, 071905 (2009)]
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/5/10.1063/1.3623430
10.1063/1.3623430
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