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Efficiency enhancement of a-Si:H single junction solar cells by a-Ge:H incorporation at the p+ a-SiC:H/transparent conducting oxide interface
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10.1063/1.3619185
/content/aip/journal/apl/99/6/10.1063/1.3619185
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/6/10.1063/1.3619185
/content/aip/journal/apl/99/6/10.1063/1.3619185
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/content/aip/journal/apl/99/6/10.1063/1.3619185
2011-08-08
2014-07-10
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Scitation|Efficiency enhancement of a-Si:H single junction solar cells by a-Ge:H incorporation at the p+ a-SiC:H/transparent conducting oxide interface
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/6/10.1063/1.3619185
10.1063/1.3619185
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