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(Color online) Optical band gap measurement of a-Si:H and a-SiC:H by using Tauc’s plot (see Ref. 4).
(Color online) Band diagrams of materials used for fabricating a-Si:H single junction solar cells before equilibrium.
(Color online) Light J-V curves of the single junction a-Si:H cells with different processing conditions (a) comparison of J-V curves of a-Si:H solar cells with/without carbon-doped window layers (b) comparison of J-V curves of a-Si:H solar cells with different GeH4 plasma treatment time. Efficiency enhancement of >25% with the 2 s a-Ge:H interfacial treatment is observed.
(Color online) Normalized EQE of the a-Si:H solar cells with different GeH4 plasma conditions.
(Color online) Light J-V curves of sandwich structures of 2 nm gold/50 nm p-type a-SiC:H/TCO with/without a-Ge:H buffers.
Parameters of the a-Si:H solar cells with different GeH4 plasma conditions.
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