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Efficiency enhancement of a-Si:H single junction solar cells by a-Ge:H incorporation at the p+ a-SiC:H/transparent conducting oxide interface
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10.1063/1.3619185
/content/aip/journal/apl/99/6/10.1063/1.3619185
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/6/10.1063/1.3619185

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Optical band gap measurement of a-Si:H and a-SiC:H by using Tauc’s plot (see Ref. 4).

Image of FIG. 2.
FIG. 2.

(Color online) Band diagrams of materials used for fabricating a-Si:H single junction solar cells before equilibrium.

Image of FIG. 3.
FIG. 3.

(Color online) Light J-V curves of the single junction a-Si:H cells with different processing conditions (a) comparison of J-V curves of a-Si:H solar cells with/without carbon-doped window layers (b) comparison of J-V curves of a-Si:H solar cells with different GeH4 plasma treatment time. Efficiency enhancement of >25% with the 2 s a-Ge:H interfacial treatment is observed.

Image of FIG. 4.
FIG. 4.

(Color online) Normalized EQE of the a-Si:H solar cells with different GeH4 plasma conditions.

Image of FIG. 5.
FIG. 5.

(Color online) Light J-V curves of sandwich structures of 2 nm gold/50 nm p-type a-SiC:H/TCO with/without a-Ge:H buffers.

Tables

Generic image for table
Table I.

Parameters of the a-Si:H solar cells with different GeH4 plasma conditions.

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/content/aip/journal/apl/99/6/10.1063/1.3619185
2011-08-08
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Efficiency enhancement of a-Si:H single junction solar cells by a-Ge:H incorporation at the p+ a-SiC:H/transparent conducting oxide interface
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/6/10.1063/1.3619185
10.1063/1.3619185
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