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Modelling the resistive state in a transition edge sensor
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10.1063/1.3621829
/content/aip/journal/apl/99/6/10.1063/1.3621829
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/6/10.1063/1.3621829
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) R(T,I) for a TES with transparent lead/TES interface; (c) dependences of αI , βI , and R calculated at fixed current I = 0.3Ic 0 on temperature in the range, corresponding to 0.1 ≤ R/RN ≤ 0.9: TcL /Tc  = 20, L/ξN  = 25. Tc and ξN are TES intrinsic critical temperature and coherence length, respectively, and Ic 0Ic (Tc ); (b)-(d) as (a)-(c) but for low interface transparency; (e) calculated critical current dependence on temperature: upper curve—high and lower curve—low interface transparency.

Image of FIG. 2.
FIG. 2.

(a) Electrical equivalent circuit with the TES modelled as an overdamped junction, is the shunt resistor; (b) low current complex impedance with (bottom curves of the pairs) and without (top curves) account taken of the intrinsic TES reactance: 1—R/RN  = 0.03, 2—R/RN  = 0.1, 3—R/RN  = 0.5.

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/content/aip/journal/apl/99/6/10.1063/1.3621829
2011-08-08
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modelling the resistive state in a transition edge sensor
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/6/10.1063/1.3621829
10.1063/1.3621829
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