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Mismatch relaxation by stacking fault formation of AlN islands in AlGaN/GaN structures on m-plane GaN substrates
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10.1063/1.3622642
/content/aip/journal/apl/99/6/10.1063/1.3622642
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/6/10.1063/1.3622642
/content/aip/journal/apl/99/6/10.1063/1.3622642
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/content/aip/journal/apl/99/6/10.1063/1.3622642
2011-08-08
2014-09-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mismatch relaxation by stacking fault formation of AlN islands in AlGaN/GaN structures on m-plane GaN substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/6/10.1063/1.3622642
10.1063/1.3622642
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