Full text loading...
(Color online) (a) Schematic device structure of the F-plasma implanted diode. (b) I-V curves of the un-implanted (dashed line) and F-plasma implanted (solid line) diodes. (c) Calculated dV/dI vs applied bias of the un-implanted (dashed line) and F-plasma implanted (solid line) diodes. V t3r, V t2 and V t3 correspond to the voltages at which dV/dI begins a fast decrease. (d) EL (solid line) and PL (dashed line) spectra of the F-plasma implanted diode. All the data shown in this figure are measured at 20 K.
(Color online) Schematic band diagrams of the F-plasma implanted Ni/Au-AlGaN/GaN Schottky diode, (a) at zero bias, and (b) at bias far beyond the turn-on voltage. See the main text for detailed discussion about φ B, φ B′, and hole injection processes.
(Color online) EL intensity vs diode current curves of the un-implanted (open triangle) and F-plasma implanted (open circle) diodes. The inset shows the EL intensity vs applied bias curve of the F-plasma implanted diode. The solid line is a guide for eyes. The arrow marks a deviation from the line at 3.45 V.
Article metrics loading...