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(Color online) RHEED patterns along the  azimuth at a substrate temperature of 530 °C for an In flux of 6.3 × 1012 atoms·cm−2·s−1. The patterns were taken at (a) 0, (b) 124, (c) 168, (d) 208, and (e) 248 s. For comparison, the pattern (f) was taken at a Tsub of 600 °C under an arsenic overpressure after In irradiation for 248 s.
(Color online) RHEED intensity as a function of In irradiation time for different (a) TIn and (b) Tsub . The TIn of 685, 717, 749, and 831 °C corresponds to In fluxes of 1.5, 3.2, 6.3, and 31 × 1012 atoms·cm−2·s−1, respectively. Insets: TIn and Tsub dependencies of Rdes .
RHEED patterns along the  and [1-10] azimuths following air-exposure of an epitaxial wafer: (a) and (d) In-assisted desorption at 530 °C with an excess In; (b) and (e) following annealing at 560 °C in the absence of an arsenic overpressure; and (c) and (f) at 560 °C under an arsenic overpressure.
(Color online) AFM surface cross-line profiles of the samples of which surface oxides were removed by (a) In-assisted and (b) thermal desorption. The line profile curves are offset for clarification. Inserts: 5 × 5 μm2 AFM images.
(Color online) PL spectra of the samples with different GaAs spacer layer thickness. The spectra are offset for clarification.
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