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Numerical investigation into the switchable diode effect in metal-ferroelectric-metal structures
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10.1063/1.3624849
/content/aip/journal/apl/99/6/10.1063/1.3624849
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/6/10.1063/1.3624849

Figures

Image of FIG. 1.
FIG. 1.

(Color online) The schematic structures and band diagrams of the MFM device under short circuit conditions in the case of non-polarization (NP) (a), right polarization (RP) (b), and left polarization (LP) (c). The arrow denotes the direction of the polarization. QP is the polarization charge; () is the barrier height; () is the built-in potential; () is the width of depletion region. Here L and R used as subscripts represent the left and right interface, respectively.

Image of FIG. 2.
FIG. 2.

(Color online) Band diagrams of M/F1/M and M/F2/M structures in the case of NP (a1), RP (a2), and LP (a3). Charge density distributions of M/F1/M and M/F2/M structures in the case of NP (b1), RP (b2), and LP (b3). The green dash line denotes the doping density 3 × 1017 cm−3 of F1 and F2. J-V curves of M/F1/M in the linear scale (c1) and the semi-logarithmic scale (c2), M/F2/M in the linear scale (c3), and the semi-logarithmic scale (c4).

Image of FIG. 3.
FIG. 3.

(Color online) The experimental (diamonds) and calculated (lines) I-V in the case of RP (a) and LP (b) for the SRO/BFO/Pt structure.

Image of FIG. 4.
FIG. 4.

(Color online) The calculated versus the polarization in the SRO/BFO/Pt structure.

Tables

Generic image for table
Table I.

The parameters used in our calculations.

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/content/aip/journal/apl/99/6/10.1063/1.3624849
2011-08-10
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Numerical investigation into the switchable diode effect in metal-ferroelectric-metal structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/6/10.1063/1.3624849
10.1063/1.3624849
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