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(Color online) (a) Cartoon of CNT-TFT devices on a plastic substrate. The gate line is common to each row of devices. Separated dark rectangles on each row depict aluminum oxide with APTES functionalization and CNT deposition. (b) Cross-section of a single TFT device. (c) AFM image of semiconducting CNT monolayer deposited over Al2O3. (d) Photograph of the fabricated CNT-TFT devices on a flexible, plastic substrate.
(Color online) Measurements on a typical CNT-TFT device, = 5 μm, W = 50 μm. (a) vs. at . () at similar bias conditions. (b) vs. curves for = −3 V to 5 V.
(Color online) (a) Variation of /W with . Change in on-off ratio with for TFT devices with W = 50 μm. (b) /W and variation with . All the measurements are at .
(Color online) (a) CNT network model used in the simulation. Thin lines represent semiconducting CNTs while thick lines represent metallic CNTs. (b) Comparison of model calculations (dashed lines) with data points (W = 50 μm) for vs. and (c) for on-off ratio vs. .
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