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Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dots
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) (a) The PL spectra measured at T = 12 K for the investigated QD samples. (b) The room-temperature PL spectra for the samples with t = 0 and 2.5 nm. (c)–(f) The cross-sectional TEM images for the samples with different CL thicknesses.

Image of FIG. 2.
FIG. 2.

(Color online) Power-dependent PL spectra for the GaAsSb-capped samples with a CL thickness of (a) 2.5 nm, (b) 5 nm, and (c) 10 nm. All the PL spectra have been offset and the intensities have been normalized to their ground-state peak. (d) The ground-state peak energy of the QDs as a function of .

Image of FIG. 3.
FIG. 3.

(Color online) (a) Time-resolved PL spectra and (b) the deduced decay time for the investigated QD samples.

Image of FIG. 4.
FIG. 4.

(Color online) The calculated wave functions of the hole ground state of the InAs QD with a GaAsSb CL thickness of (a) 0 nm, (b) 2.5 nm, (c) 5 nm, and (d) 10 nm. (e) The electron-hole wave function overlaps and (f) the ground state transition energy as a function of the CL thickness, where the solid symbols are experimental data, while the solid curves (open symbols) are calculated results obtained from the first (second) set of calculations.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dots