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(Color online) (a) The PL spectra measured at T = 12 K for the investigated QD samples. (b) The room-temperature PL spectra for the samples with t = 0 and 2.5 nm. (c)–(f) The cross-sectional TEM images for the samples with different CL thicknesses.
(Color online) Power-dependent PL spectra for the GaAsSb-capped samples with a CL thickness of (a) 2.5 nm, (b) 5 nm, and (c) 10 nm. All the PL spectra have been offset and the intensities have been normalized to their ground-state peak. (d) The ground-state peak energy of the QDs as a function of .
(Color online) (a) Time-resolved PL spectra and (b) the deduced decay time for the investigated QD samples.
(Color online) The calculated wave functions of the hole ground state of the InAs QD with a GaAsSb CL thickness of (a) 0 nm, (b) 2.5 nm, (c) 5 nm, and (d) 10 nm. (e) The electron-hole wave function overlaps and (f) the ground state transition energy as a function of the CL thickness, where the solid symbols are experimental data, while the solid curves (open symbols) are calculated results obtained from the first (second) set of calculations.
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