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Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells
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10.1063/1.3624850
/content/aip/journal/apl/99/7/10.1063/1.3624850
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/7/10.1063/1.3624850
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Cross-sectional schematic of the InGaN/GaN MQW device structure.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Illuminated current density vs. voltage over a wide range of stage temperatures. (b) Illuminated power density vs. voltage over a wide range of stage temperatures.

Image of FIG. 3.
FIG. 3.

(Color online) External quantum efficiency vs. wavelength at 22 °C and 115 °C.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Measured and calculated JSC vs. temperature, (b) VOC vs. temperature, (c) RS vs. temperature, (d) FF and normalized contribution of series resistance (FFS /FFo ) vs. temperature, and (e) peak output power density vs. temperature.

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/content/aip/journal/apl/99/7/10.1063/1.3624850
2011-08-16
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/7/10.1063/1.3624850
10.1063/1.3624850
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