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Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells
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/content/aip/journal/apl/99/7/10.1063/1.3624850
2011-08-16
2014-10-20

Abstract

We report on the unique thermal properties of In0.28Ga0.72N/GaN multiple quantum wellsolar cells. The devices exhibited an external quantum efficiency of 69% (26%) at 390 nm (460 nm), an open circuit voltage of 2.04 V, a fill factor of 63%, a short circuit current density of 2 mA/cm2, and a peak output power of 2.63 mW/cm2 at room temperature under 1-sun AM1.5G illumination. Thermal measurements showed that the peak output power increased with temperature up to 2.73 mW/cm2 at 70 °C, signifying the potential of III-nitride solar cells for concentrator photovoltaic applications.

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Scitation: Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/7/10.1063/1.3624850
10.1063/1.3624850
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