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Exchange interaction of electrons with Mn in hybrid AlSb/InAs/ZnMnTe structures
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10.1063/1.3624921
/content/aip/journal/apl/99/7/10.1063/1.3624921
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/7/10.1063/1.3624921
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Figures

Image of FIG. 1.
FIG. 1.

(Color) (a) Band structure of sample A. (b) Electron wave function Ψ(z) calculated for a triangular QW with the QW potential gradient 1.8 × 107 eV/cm resulted from ionized donors at interface with the density 2 × 1013 cm−2, flat barriers, and the effective mass m * = 0.1m 0. The latter corresponds to m * at conduction-band bottom in ZnTe as well as in InAs with non-parabolicity being taken into account.

Image of FIG. 2.
FIG. 2.

Magnetic field dependence of Jx (B)/P measured for positive By . The inset shows Jx (B)/P for both By directions.

Image of FIG. 3.
FIG. 3.

(Color) Temperature dependence of the photocurrent measured at By  = 1 T. The inset shows the model of the mw-radiation induced spin polarized electric currents. Scattering matrix elements linear in k and σ cause asymmetric scattering probabilities sketched by bent arrows of various thickness.

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/content/aip/journal/apl/99/7/10.1063/1.3624921
2011-08-17
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Exchange interaction of electrons with Mn in hybrid AlSb/InAs/ZnMnTe structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/7/10.1063/1.3624921
10.1063/1.3624921
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