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Polarization-sensitive Schottky photodiodes based on a-plane ZnO/ZnMgO multiple quantum-wells
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10.1063/1.3624924
/content/aip/journal/apl/99/7/10.1063/1.3624924
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/7/10.1063/1.3624924

Figures

Image of FIG. 1.
FIG. 1.

Spectral response of the Schottky photodiodes for unpolarized light. The inset shows the dark IV characteristics of the photodiodes.

Image of FIG. 2.
FIG. 2.

Spectral response as a function of light polarization for the Schottky photodiodes grown on r-plane sapphire. The inset shows the R/R|| ratio.

Image of FIG. 3.
FIG. 3.

Spectral response as a function of light polarization for the Schottky photodiode grown on a-plane ZnO. The inset shows the R/R|| ratio.

Tables

Generic image for table
Table I.

Figures of merit for the different polarization-sensitive photodetectors.

Generic image for table
Table II.

Calculated exciton transition energies and oscillator strengths (f) for the QWs. T 1, T 2, and T 3 denote the excitonic transitions between the conduction and the A, B, and C valence bands, respectively. Ei Ei −1 denotes the energy difference between one given excitonic transition and the previous one in the table.

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/content/aip/journal/apl/99/7/10.1063/1.3624924
2011-08-17
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Polarization-sensitive Schottky photodiodes based on a-plane ZnO/ZnMgO multiple quantum-wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/7/10.1063/1.3624924
10.1063/1.3624924
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