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Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate
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10.1063/1.3624927
/content/aip/journal/apl/99/7/10.1063/1.3624927
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/7/10.1063/1.3624927
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) The left graph displays the integrated emission intensity versus the pump intensity of a ∼300 μm long MQW laser bar at 10 K. The right graph shows the emission spectrum of a ∼480 μm long laser bar above threshold at 10 K.

Image of FIG. 2.
FIG. 2.

Dark field TEM images of the Ga(NAsP)/(BGa)(AsP) triple quantum laser device. The upper image shows the SCH containing the QWs (cross section in [010]) whereas the lower image shows the region around the GaP/Si interface (cross section in [110]).

Image of FIG. 3.
FIG. 3.

(Color online) The left graph shows the integrated emission intensity versus drive current of an electrical pumped triple QW laser for different temperatures. The right graph contains the emission spectrum of a single and triple QW laser for a drive current above threshold.

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/content/aip/journal/apl/99/7/10.1063/1.3624927
2011-08-17
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/7/10.1063/1.3624927
10.1063/1.3624927
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