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(Color online) High-resolution (004) XRD patterns and simulations (offset below each measurement) for samples A and B.
Cross-sectional transmission electron micrograph of sample A demonstrating the excellent crystallinity of the InAs/InAsSb superlattice grown on a GaSb (100) substrate.
(Color online) Photoluminescence spectra at 6 K for samples A and B. The inset shows the type-II band alignment between InAs and InAs1−xSbx.
(Color online) The temperature-dependent spectral photoresponse of sample A, showing strong signals up to 200 K and out to 8.6 μm (145 meV), and sample B, showing signals up to only 60 K and out to 5.9 μm (210 meV).
Structural details for the superlattices studied in this work.
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