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Experimental validation of the exponential localized states distribution in the variable range hopping mechanism in disordered silicon films
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10.1063/1.3625944
/content/aip/journal/apl/99/7/10.1063/1.3625944
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/7/10.1063/1.3625944
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Polycrystalline silicon TFTs are biased from weak to strong inversion (−4 V ≤ VGS ≤ 4 V). (a) Plots of the measured channel conductance activation energy as a function of the gate voltage. (b) Polycrystalline silicon TFTs channel conductance as a function of T1/4.

Image of FIG. 2.
FIG. 2.

Plots of the polycrystalline silicon TFTs channel conductance pre-factor gDS0 as a function of T0 1/4.

Image of FIG. 3.
FIG. 3.

Distribution of localized states as a function of the position of the Fermi level in the upper part of the bandgap calculated with c = 4.2, and for 0.3 nm ≤ γ−1 ≤ 3 nm (grey area). Dotted plots: calculated exponential distribution following (4) for γ−1 = 3 nm. The linear fit gives a linear regression coefficient R = 0.989, with error bar ΔN0 = 1.4 × 1021 cm−3 eV−1 and ΔE0 = 1.2 meV.

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/content/aip/journal/apl/99/7/10.1063/1.3625944
2011-08-16
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Experimental validation of the exponential localized states distribution in the variable range hopping mechanism in disordered silicon films
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/7/10.1063/1.3625944
10.1063/1.3625944
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