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Effect of free-carrier concentration on the phase transition and vibrational properties of VO2
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10.1063/1.3626032
/content/aip/journal/apl/99/7/10.1063/1.3626032
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/7/10.1063/1.3626032

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Conductivity versus temperature for representative samples. Arrows show temperature increase or decrease. (b) Logarithmic derivative of conductivity.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Dependence of 224 cm−1 Raman band on temperature. (b) Dependence for 614 cm−1 band. (inset) Raman spectrum for S5 at temperatures 294, 323, 328, 330, 333, and 343 K. The feature at 520 cm−1 is from the Si substrate. Intensities have been rescaled: the Si peak drops by ∼1 order between ambient and TMIT .

Image of FIG. 3.
FIG. 3.

(Color online) Phase diagram of VO2 based on conductivity and Raman measurements. Dashed lines follow individual samples. Solid illustrate trends for Tonset and TMIT from σ. Insulating, mixed, and conducting regimes are denoted.

Tables

Generic image for table
Table I.

Designation, growth temperatures, and free-carrier concentrations for the VO2 films and TMIT .

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/content/aip/journal/apl/99/7/10.1063/1.3626032
2011-08-16
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of free-carrier concentration on the phase transition and vibrational properties of VO2
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/7/10.1063/1.3626032
10.1063/1.3626032
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