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Suppression of planar defects in the molecular beam epitaxy of GaAs/ErAs/GaAs heterostructures
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10.1063/1.3626035
/content/aip/journal/apl/99/7/10.1063/1.3626035
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/7/10.1063/1.3626035
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Illustration of the nanoparticle-seeded film growth method for embedding ErAs in GaAs. (a) At the initiation of an erbium flux, erbium segregates to the surface. (b) ErAs nanoparticles form when the surface concentration exceeds the critical areal density. (c) Exposed GaAs seeds the overgrowth of the nanoparticles resulting in a single-phase spacer. (d) Erbium diffuses through the spacer and incorporates at the nanoparticle seed layer. The layer grows laterally until it coalesces into a film. The GaAs spacer maintains the symmetry of the substrate and seeds subsequent III-V film growth.

Image of FIG. 2.
FIG. 2.

Cross-section TEM image of the ErAs layers. The spacer thickness (tsp ) for each film is overlaid on the image.

Image of FIG. 3.
FIG. 3.

High-resolution TEM images of (a) conventionally grown ErAs layer and (b) nanoparticle-seeded ErAs layer grown through 1.0 nm GaAs spacer.

Image of FIG. 4.
FIG. 4.

High-resolution TEM image of the nanoparticle-seeded ErAs layer grown with 3.0 nm GaAs spacer. The two distinct nanoparticle layers (denoted lower and upper) correspond to the nanoparticle seed layer (lower) and the parasitic surface nanoparticle layer (upper).

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/content/aip/journal/apl/99/7/10.1063/1.3626035
2011-08-19
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Suppression of planar defects in the molecular beam epitaxy of GaAs/ErAs/GaAs heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/7/10.1063/1.3626035
10.1063/1.3626035
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