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Understanding the intermediate initial state in TiO2−δ/La2/3Sr1/3MnO3 stack-based bipolar resistive switching devices
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10.1063/1.3626597
/content/aip/journal/apl/99/7/10.1063/1.3626597
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/7/10.1063/1.3626597
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic view of the stacked TiO2−δ/LSMO based RRAM devices. (b) The XRD spectrum of the as-deposited films. The epitaxial growth of the TiO2−δ/LSMO stacks was confirmed with a highly c axis orientation.

Image of FIG. 2.
FIG. 2.

(Color online) Special bipolar RS behavior of the stacked TiO2−δ/LSMO devices. (a) Positive electrical biases with increasing maximum voltage (+3V,+5V) switch the as-deposited device from ORS to HRS1 and HRS2. (b) Negative electrical biases with increasing current compliance (0.1 mA, 1 mA) switch the as-deposited device from ORS to LRS1 and LRS2. (c) The I-V curves for each state of TiO2−δ/LSMO stacks, confirming the intermediate ORS state is just between multiple HRS and LRS.

Image of FIG. 3.
FIG. 3.

(Color online) (a) The XPS depth profile performed on the TiO2−δ/LSMO stacks. The content of each element during Ar-etching is demonstrated. (b) The effective oxygen stoichiometry of TiO2−δ layer. The δ value is continuously reduced to zero on approaching the TiO2−δ/LSMO interface. (c) The schematic structure of the TiO2−δ/TiO2/LSMO stacks.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Plots of In |I/V| vs V1/2 for the ORS, HRS1, and HRS2 with same linear slope and increased intercepts. (b) Plots of In |I/V| vs V1/2 for the ORS, LRS1, and LRS2. The LRS obviously deviated from the P-F emission in higher current compliance situations. (c) LRS2 switched back to HRS under positive electrical biases. The multiple HRS agreed with P-F transition again. (d) Schematic of the microscopic switching process for understanding the intermediate initial state and switching polarity behavior in the stacked TiO2−δ/LSMO devices.

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/content/aip/journal/apl/99/7/10.1063/1.3626597
2011-08-18
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Understanding the intermediate initial state in TiO2−δ/La2/3Sr1/3MnO3 stack-based bipolar resistive switching devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/7/10.1063/1.3626597
10.1063/1.3626597
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