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Short channel device performance of amorphous InGaZnO thin film transistor
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10.1063/1.3623426
/content/aip/journal/apl/99/8/10.1063/1.3623426
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/8/10.1063/1.3623426
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Cross-sectional TEM image of a fabricated a-IGZO TFT with gate length of 180 nm. Insets show high-resolution TEM images of the area marked with a red square in the TEM image, giving a closer view of Mo-Al2O3-SiO2-IGZO, multi-active channel, and amorphous microstructure of an IGZO semiconductor. (b) Transfer curves of a fabricated TFT with gate length of 180 nm. The inset shows Ig−Vg, Is−Vg, and Id−Vg at drain bias of 1.0 V.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Dependence of various device performances such as saturation mobility, sub-threshold slope, and off-leakage current of fabricated TFTs on gate-to-contact spacing. (b) The dependence on active shape of device performance of fabricated TFTs; upper inset shows HAADF STEM image of various active structures. Inset shows IDS-VGS transfer curves of fabricated IGZO TFTs with active shape (A, B, and C).

Image of FIG. 3.
FIG. 3.

(Color online) (a) Capacitance-voltage curves of MOS capacitors with Al2O3 single dielectric and Al2O3-SiO2 dual gate dielectric with increasing frequency from 1 kHz to 100 kHz. Inset shows the evolution of flat band voltage shift as a function of stress time. A gate bias of 3 V was used for the stress source. (b) IDS-VGS transfer curves of fabricated IGZO TFTs with Al2O3 single dielectric and Al2O3-SiO2 dual gate dielectric. Symbol indicates the measured data and line indicates the simulated data on the basis of sub-gap density of states based on amorphous oxide thin film transistor simulator. Inset shows the extracted parameters including bulk density of states and interface trap. (c) Photoelectron spectra of O 2s, Ga 3d, In 4d, and Zn 3d valence bands recorded at different take-off angles (10°, 20°, 45°, 75°, and 90°) for SiO2/IGZO and Al2O3/IGZO interfaces. The bands located between 0 and 15 eV regroup the bonding and non-bonding (represented by * and **, respectively) states in SiO2 and Al2O3 [Si 3s (Al 3s)−Si 3p (Al 3p) hybridizing with O 2p].

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/content/aip/journal/apl/99/8/10.1063/1.3623426
2011-08-23
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Short channel device performance of amorphous InGaZnO thin film transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/8/10.1063/1.3623426
10.1063/1.3623426
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