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Investigation of fast and slow decays in InGaN/GaN quantum wells
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10.1063/1.3627166
/content/aip/journal/apl/99/8/10.1063/1.3627166
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/8/10.1063/1.3627166
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Excitation power density dependent PL spectra for InGaN QWs measured at 5 K. (b) The emission energy of PL vs excitation power density measure at 5 K. (c) The emission energy of PL vs carrier density for excitation power density higher than 16.7 W/cm2. The solid curve is a fit based on band gap renormalization effect.

Image of FIG. 2.
FIG. 2.

(Color online) (a) The emission energy of PL vs temperature measured at 16.7 W/cm2. The solid curve is a fit based on band tail model. (b) Normalized integrated PL intensity as s function of 1/T for InGaN QWs measured at 16.7 W/cm2. The solid curves are single and two channels Arrhenius fits, respectively. Ea and Eb stand for the activation energy.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Pump-probe differential PL spectra at different delay times measured at 5 K. (b) Differential ratio vs. delay time measured at different temperatures. The solid curves are single exponential fits to experiment data.

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/content/aip/journal/apl/99/8/10.1063/1.3627166
2011-08-23
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of fast and slow decays in InGaN/GaN quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/8/10.1063/1.3627166
10.1063/1.3627166
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