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Three-dimensional k · p real-space quantum transport simulations of p-type nanowire transistors: Influence of ionized impurities
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10.1063/1.3628316
/content/aip/journal/apl/99/8/10.1063/1.3628316
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/8/10.1063/1.3628316
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Transmission coefficients computed with −VG varying from 0 to 0.5 V by steps of 0.1 V. The shift of the transmissions toward the lower energies with the gate voltage increase is clearly visible as well as the transition from smooth to peaked transmissions. (b) Local density of states, potential and transmission in intrinsic channel Si p-type nanowire MOSFET at VG  = 0 V. For the sake of clarity transmissions, valence band-structures and potentials are represented in terms of hole energy. VDS  = −0.4 V.

Image of FIG. 2.
FIG. 2.

(Color online) ID VG characteristics for Si p-type nanowire MOSFET without impurity (squares), with a donor (circles) and an acceptor (triangles) in the middle of the channel cross-section and with a donor located at the edge of the cross-section (empty circles). VDS  = −0.4 V.

Image of FIG. 3.
FIG. 3.

(Color online) Transmission coefficients at VG  = 0 V for Si p-type nanowire MOSFET without impurity (solid line) and with a donor (dashed line) or an acceptor (doted line) in the middle of the channel cross-section. For the sake of clarity, the transmissions are represented in terms of hole energy. VDS  = −0.4 V.

Image of FIG. 4.
FIG. 4.

(Color online) Local density of states, potential and transmission in a Si p-type nanowire MOSFET with an acceptor located in the middle of the cross-section. Subbands in reservoirs are also represented. VDS  = −0.4 V and VG  = 0 V. For the sake of clarity, valence band-structures and potentials are represented in terms of hole energy.

Image of FIG. 5.
FIG. 5.

(Color online) (a) Potential along the nanowire without impurity (solid line) and with an acceptor impurity (dashed line) in the middle of the cross-section and (b) schematic representation of hole transport through an attractive Coulomb potential. Resonant (solid arrow) and anti-resonant (dashed arrow) transmission. VDS  = −0.4 V and VG  = 0 V.

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/content/aip/journal/apl/99/8/10.1063/1.3628316
2011-08-26
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Three-dimensional k · p real-space quantum transport simulations of p-type nanowire transistors: Influence of ionized impurities
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/8/10.1063/1.3628316
10.1063/1.3628316
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