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Electrical characteristics of wrinkle-free graphene formed by laser graphitization of 4H-SiC
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Image of FIG. 1.
FIG. 1.

SEM photographs showing progressive changes in SiC surface during laser graphitization. (a) Graphene islands formed on a terrace of 4H-SiC and (b) large area graphene formed on 4H-SiC substrate. The graphitization was performed at 1E-7Torr.

Image of FIG. 2.
FIG. 2.

(Color online) Peak-to-valley roughness of SiC substrate at various stages of the laser graphitization. Inset shows AFM images of SiC surface corresponding to the roughness values shown below.

Image of FIG. 3.
FIG. 3.

(Color online) Raman spectrum of graphene after the laser graphitization at 1E-7 Torr using KrF laser (pulse width = 25ns and pulse energy = 1.23 J/cm2).

Image of FIG. 4.
FIG. 4.

Id versus Vg-VDirac (charge neutral point VDirac is around −0.3V) curves of top gate graphene FETs on the laser processed graphene/4H-SiC substrate normalized at EOT = 10 nm and W/L = 1 μm/1 μm. Curves with empty marks are obtained after excluding the contact resistance between Au and graphene. Values of field effect mobility increased by ∼16% after excluding the series resistance components.


Generic image for table
Table I.

Comparison of the device parameters of MOSFETs on graphene/SiC substrate formed by a laser graphitization and a thermal graphitization. Normalized Id was obtained at Equivalent Oxide Thickness (EOT) = 10 nm and W/L = 1 μm/1 μm.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical characteristics of wrinkle-free graphene formed by laser graphitization of 4H-SiC