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SEM photographs showing progressive changes in SiC surface during laser graphitization. (a) Graphene islands formed on a terrace of 4H-SiC and (b) large area graphene formed on 4H-SiC substrate. The graphitization was performed at 1E-7Torr.
(Color online) Peak-to-valley roughness of SiC substrate at various stages of the laser graphitization. Inset shows AFM images of SiC surface corresponding to the roughness values shown below.
(Color online) Raman spectrum of graphene after the laser graphitization at 1E-7 Torr using KrF laser (pulse width = 25ns and pulse energy = 1.23 J/cm2).
Id versus Vg-VDirac (charge neutral point VDirac is around −0.3V) curves of top gate graphene FETs on the laser processed graphene/4H-SiC substrate normalized at EOT = 10 nm and W/L = 1 μm/1 μm. Curves with empty marks are obtained after excluding the contact resistance between Au and graphene. Values of field effect mobility increased by ∼16% after excluding the series resistance components.
Comparison of the device parameters of MOSFETs on graphene/SiC substrate formed by a laser graphitization and a thermal graphitization. Normalized Id was obtained at Equivalent Oxide Thickness (EOT) = 10 nm and W/L = 1 μm/1 μm.
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