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InP-based InAs/InGaAs quantum wells with type-I emission beyond 3 μm
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10.1063/1.3629999
/content/aip/journal/apl/99/8/10.1063/1.3629999
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/8/10.1063/1.3629999
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Bright-field XTEM images of the whole epitaxy structure and the active InAs/In0.53Ga0.47As QWs.

Image of FIG. 2.
FIG. 2.

(Color online) HRXRD (004) scanning curves of (a) sample 1 and (b) sample 2. The thick and thin lines show the measured and simulated results, respectively.

Image of FIG. 3.
FIG. 3.

(Color online) PL results of the samples at (a) 300 K and (b) 77 K. The thin and thick lines show the results of sample 1 and 2, respectively. The absorption bands of water are also indicated.

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/content/aip/journal/apl/99/8/10.1063/1.3629999
2011-08-25
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InP-based InAs/InGaAs quantum wells with type-I emission beyond 3 μm
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/8/10.1063/1.3629999
10.1063/1.3629999
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