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Third-order nonlinearity in silicon beyond 2350 nm
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Experimental setup used for z-scan measurements. OPA: optical parametric amplifier, LPF: long pass filter, Det: detector, Att: neutral density filter, and Pol: crossed polarizers.

Image of FIG. 2.
FIG. 2.

(Color online) Z-scan transmission traces for 460 μm thick Si at 2598 nm for peak intensities of 27 GW/cm2 and 139 GW/cm2. Solid dots show the experimental data and the thin solid lines are best fits based on a numerical fit to Eq. (2) for 3PA, and an analytical solution fit to Eq. (3) for n2.

Image of FIG. 3.
FIG. 3.

(Color online) Measured n2 (triangles) and γ (circles) values for 460μm thick intrinsic silicon sample as a function of wavelength.

Image of FIG. 4.
FIG. 4.

(Color online) n2 values obtained from the fits to experimental data (triangles), 3PA (circles) as a function of peak intensity at 2598 nm. Dashed line is theoretical fit based on 3PA.

Image of FIG. 5.
FIG. 5.

(Color online) Nonlinear figure of merit for region with TPA: squares (data from Ref. 6) and region with 3PA: circles (measured data).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Third-order nonlinearity in silicon beyond 2350 nm