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Growth of Si-doped GaInP on Ge-on-Si substrates and its photoluminescence characteristics
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10.1063/1.3623757
/content/aip/journal/apl/99/9/10.1063/1.3623757
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/9/10.1063/1.3623757
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Bright field cross sectional TEM image of the GaInP on a GOS substrate. (b) SADP of GaInP along the [1-10] zone axis.

Image of FIG. 2.
FIG. 2.

(Color online) (a) PL spectra for Si-doped GaInP on the GOS substrate at various temperatures from 19 K to room temperature and (b) temperature dependence of the emission energy for Peak #1. The dotted line represents the fitting using the Varshni equation. The dashed lines show fitted curves with parameters used in previous research as the references.

Image of FIG. 3.
FIG. 3.

(Color online) Temperature dependence of integrated PL intensities for Peak #2. The dotted line shows the data fitting using a two-step thermal quenching process. The inset describes the relevant energy levels in Si-doped GaInP on a GOS substrate.

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/content/aip/journal/apl/99/9/10.1063/1.3623757
2011-08-30
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth of Si-doped GaInP on Ge-on-Si substrates and its photoluminescence characteristics
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/9/10.1063/1.3623757
10.1063/1.3623757
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