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Role of surface orientation on atomic layer deposited Al2O3/GaAs interface structure and Fermi level pinning: A density functional theory study
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10.1063/1.3624897
/content/aip/journal/apl/99/9/10.1063/1.3624897
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/9/10.1063/1.3624897
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (111)A and B OH terminated surface undergoing transformation indicated by reactions (1)(right) and (2)(left). O, As, Ga, and H atoms are represented by red, larger white, grey, and smaller white spheres, respectively. The box indicates the (2X1) unit cell used in our calculations.

Image of FIG. 2.
FIG. 2.

(Color online) Interface structures obtained at the end of the first cycle of ALD half-reactions on (111)A and B, respectively. Al atoms are represented by yellow spheres.

Image of FIG. 3.
FIG. 3.

(Color online) Plot of DOS versus energy for the structures shown in Fig. 2 compared with the DOS of bulk GaAs.

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/content/aip/journal/apl/99/9/10.1063/1.3624897
2011-09-02
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Role of surface orientation on atomic layer deposited Al2O3/GaAs interface structure and Fermi level pinning: A density functional theory study
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/9/10.1063/1.3624897
10.1063/1.3624897
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