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Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors
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10.1063/1.3633100
/content/aip/journal/apl/99/9/10.1063/1.3633100
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/9/10.1063/1.3633100
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a), (b) Transfer characteristics of TFTs annealed in O3 at (a) 50 –250 °C and (b) 300 °C. (b) shows 3 cycles of measurement results. (c) Recovery of transfer characteristics by illumination of monochromated photons with energies varied from 2.3 to 3.2 eV. Inset shows the variation of Von (defined by IDS = 10−10 A) as a function of photon energy. (d) TDS spectra for m/z = 32 (corresponds to O2 +) for a-IGZO films subjected to different annealing processes. Annealing conditions are indicated in the figure.

Image of FIG. 2.
FIG. 2.

(Color online) Subgap trap states model. (a) Initial large S state. (b)Transition to large Vth state by applying positive VGS. (c) Photoexcitation of the electrons trapped by the deep Oex states. (d) Recovery to the initial large S states.

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/content/aip/journal/apl/99/9/10.1063/1.3633100
2011-09-02
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/9/10.1063/1.3633100
10.1063/1.3633100
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