Volume 107, Issue 1, 06 July 2015
Index of content:
- PHOTONICS AND OPTOELECTRONICS
Role of the wetting layer in the enhanced responsivity of InAs/GaAsSb quantum dot infrared photodetectors107(2015); http://dx.doi.org/10.1063/1.4926364View Description Hide Description
InAs/GaAs1−xSbx Quantum Dot (QD) infrared photodetectors are analyzed by photocurrent spectroscopy. We observe that the integrated responsivity of the devices is improved with the increasing Sb mole fraction in the capping layer, up to 4.2 times for x = 17%. Since the QD layers are not vertically aligned, the vertical transport of the carriers photogenerated within the QDs takes place mainly through the bulk material and the wetting layer of the additional QD regions. The lower thickness of the wetting layer for high Sb contents results in a reduced capture probability of the photocarriers, thus increasing the photoconductive gain and hence, the responsivity of the device. The growth of not vertically aligned consecutive QD layers with a thinner wetting layer opens a possibility to improve the performance of quantum dot infrared photodetectors.
Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture107(2015); http://dx.doi.org/10.1063/1.4926365View Description Hide Description
We report on our recent progress in improving the performance of nonpolar III-nitride vertical-cavity surface-emitting lasers (VCSELs) by using an Al ion implanted aperture and employing a multi-layer electron-beam evaporated ITO intracavity contact. The use of an ion implanted aperture improves the lateral confinement over SiNx apertures by enabling a planar ITO design, while the multi-layer ITO contact minimizes scattering losses due to its epitaxially smooth morphology. The reported VCSEL has 10 QWs, with a 3 nm quantum well width, 1 nm barriers, a 5 nm electron-blocking layer, and a 6.95- total cavity thickness. These advances yield a single longitudinal mode 406 nm nonpolar VCSEL with a low threshold current density (∼16 kA/cm2), a peak output power of ∼12 μW, and a 100% polarization ratio. The lasing in the current aperture is observed to be spatially non-uniform, which is likely a result of filamentation caused by non-uniform current spreading, lateral optical confinement, contact resistance, and absorption loss.
High power continuous-wave GaSb-based superluminescent diodes as gain chips for widely tunable laser spectroscopy in the 1.95–2.45 μm wavelength range107(2015); http://dx.doi.org/10.1063/1.4926367View Description Hide Description
We present high-power single-spatial mode electrically pumped GaSb-based superluminescent diodes (SLDs) operating in the 1.95 to 2.45 μm wavelength range in continuous-wave (CW). MBE grown GaSb-based heterostructures were fabricated into single-angled facet ridge-waveguide devices that demonstrate more than 40 mW CW output power at 2.05 μm, to >5 mW at 2.40 μm at room-temperature. We integrated these SLDs into an external cavity (Littrow configuration) as gain chips and achieved single-mode CW lasing with maximum output powers exceeding 18 mW. An extremely wide tuning range of 120 nm per chip with side-mode-suppression-ratios >25 dB was demonstrated while maintaining optical output power level above 3 mW across the entire tuning range.
107(2015); http://dx.doi.org/10.1063/1.4926409View Description Hide Description
Significant departures from bulk-like magneto-optic behavior are found in ultra-thin bismuth-substituted iron-garnet films grown by liquid-phase-epitaxy. These changes are due, at least in part, to geometrical factors and not to departures from bulk-composition in the transient layer at the film-substrate interface. A monotonic increase in specific Faraday rotation with reduced thickness is the signature feature of the observed phenomena. These are traced to size-dependent modifications in the diamagnetic transition processes responsible for the Faraday rotation. These processes correspond to the electronic transitions from singlet 6S ground states to spin-orbit split excited states of the Fe3+ ions in the garnet. A measurable reduction in the corresponding ferrimagnetic resonance linewidths is found, thus pointing to an increase in electronic relaxation times and longer lived excitations at reduced thicknesses. These changes together with a shift in vibrational frequency of the Bi-O bonds in the garnet at reduced thicknesses result in greatly enhanced magneto-optical performance. These studies were conducted on epitaxial monocrystalline Bi0.8Gd0.2Lu2Fe5O12 films.
107(2015); http://dx.doi.org/10.1063/1.4926328View Description Hide Description
X-ray ptychography is an ultrahigh-resolution scanning coherent diffractive imaging technique, allowing quantitative measurements of extended samples and a simultaneous reconstruction of the illuminating wavefront. Recent development of the mixed-state reconstruction algorithm has triggered a certain interest in utilizing partially coherent X-ray sources for ptychography. Here, we study how finite spatial coherence influences the reconstructed image of a test structure. Our work shows that use of a highly coherent illumination provides images with better spatial resolution and fewer artefacts than the approach with partial coherence.